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QS6U22
Transistors
Electrical characteristic curves
<MOSFET>
10
V DS = ? 10V
10000
V GS = ? 10V
10000
V GS = ? 4.5V
1
Pulsed
Pulsed
Pulsed
0.1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
0.01
0.001
1
1.5
2
2.5
3
3.5
4
4.5
5
100
0.1
1
10
100
0.1
1
10
GATE-SOURCE VOLTAGE : ? V GS (V)
Fig.1 Typical Transfer Characteristics
DRAIN CURRENT : ? I D (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
DRAIN CURRENT : ? I D (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
10000
V GS = ? 4V
Pulsed
1200
1100
I D = ? 1.2A
I D = ? 0.6A
Ta = 25 ° C
Pulsed
10000
Ta = 25 ° C
Pulsed
1000
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
900
800
700
1000
V GS = ? 4.0V
V GS = ? 4.5V
V GS = ? 10V
600
500
400
300
100
0.1
1
DRAIN CURRENT : ? I D (A)
10
200
0
2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : ? V GS (V)
100
0.1
1
DRAIN CURRENT : ? I D (A)
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙΙ )
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( )
10
V GS = 0V
Pulsed
1000
Ta = 25 ° C
f = 1MHz
V GS = 0V
1000
Ta = 25 ° C
V DD = ? 15V
V GS = ? 10A
R G = 10 ?
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
100
C iss
100
t f
t d (off)
Pulsed
0.1
C oss
C rss
10
t d (on)
t r
0.01
0.0
0.5
1
1.5
2
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : ? V SD (V)
Fig.7 Reverse Drain Current vs.
Source-Drain Voltage
DRAIN-SOURCE VOLTAGE : ? V DS (V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
DRAIN CURRENT : ? I D (A)
Fig.9 Switching Characteristics
Rev.A
3/4
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